1 MAC12D, mac12m, mac12n triacs silicon bidirectional thyristors designed for high performance full?wave ac control applications where high noise immunity and commutating di/dt are required. ? blocking voltage to 800 volts ? on?state current rating of 12 amperes rms at 70 c ? uniform gate trigger currents in three quadrants, q1, q2, and q3 ? high immunity to dv/dt e 250 v/ m s minimum at 125 c ? high commutating di/dt e 6.5 a/ms minimum at 125 c ? industry standard to?220 ab package ? high surge current capability e 100 amperes ? device marking: logo, device type, e.g., MAC12D, date code maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive off?state voltage (1) (t j = ?40 to 125 c, sine wave, 50 to 60 hz, gate open) MAC12D mac12m mac12n v drm, v rrm 400 600 800 volts on-state rms current (all conduction angles; t c = 70 c) i t(rms) 12 a peak non-repetitive surge current (one full cycle, 60 hz, t j = 125 c) i tsm 100 a circuit fusing consideration (t = 8.33 ms) i 2 t 41 a 2 sec peak gate power (pulse width 1.0 m s, t c = 80 c) p gm 16 watts average gate power (t = 8.3 ms, t c = 80 c) p g(av) 0.35 watts operating junction temperature range t j ?40 to +125 c storage temperature range t stg ?40 to +150 c triacs 12 amperes rms 400 thru 800 volts device package shipping ordering information MAC12D to220ab 50 units/rail mac12m to220ab mac12n to220ab to?220ab case 221a style 4 1 2 3 4 pin assignment 1 2 3 gate main terminal 1 main terminal 2 4 main terminal 2 www.kersemi.com 50 units/rail 50 units/rail mt1 g mt2
MAC12D, mac12m, mac12n 2 thermal characteristics characteristic symbol value unit thermal resistance e junction to case e junction to ambient r q jc r q ja 2.2 62.5 c/w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c electrical characteristics (t j = 25 c unless otherwise noted; electricals apply in both directions) characteristic symbol min typ max unit off characteristics peak repetitive blocking current t j = 25 c (v d = rated v drm , v rrm , gate open) t j = 125 c i drm , i rrm e e e e 0.01 2.0 ma on characteristics peak on?state voltage (1) (i tm = 17 a) v tm e e 1.85 volts gate trigger current (continuous dc) (v d = 12 v, r l = 100 w ) mt2(+), g(+) mt2(+), g(?) mt2(?), g(?) i gt 5.0 5.0 5.0 13 13 13 35 35 35 ma hold current (v d = 12 v, gate open, initiating current = 150 ma) i h e 20 40 ma latch current (v d = 24 v, i g = 35 ma) mt2(+), g(+) mt2(+), g(?) mt2(?), g(?) i l e e e 20 30 20 50 80 50 ma gate trigger voltage (continuous dc) (v d = 12 v, r l = 100 w ) mt2(+), g(+) mt2(+), g(?) mt2(?), g(?) v gt 0.5 0.5 0.5 0.78 0.70 0.71 1.5 1.5 1.5 volts dynamic characteristics rate of change of commutating current (v d = 400 v, itm = 4.4a, commutating dv/dt = 18 v/ m s, gate open, t j = 125 c, f = 250 hz, no snubber) (di/dt)c 6.5 e e a/ms critical rate of rise of off?state voltage (v d = rated v drm , exponential waveform, gate open, t j = 125 c) dv/dt 250 500 e v/ m s repetitive critical rate of rise of on-state current ipk = 50 a; pw = 40 m sec; dig/dt = 200 ma/ m sec; f = 60 hz di/dt e e 10 a/ m s (1) pulse test: pulse width 2.0 ms, duty cycle 2%. www.kersemi.com
MAC12D, mac12m, mac12n 3 + current + voltage v tm i h symbol parameter v drm peak repetitive forward off state voltage i drm peak forward blocking current v rrm peak repetitive reverse off state voltage i rrm peak reverse blocking current voltage current characteristic of triacs (bidirectional device) i drm at v drm on state off state i rrm at v rrm quadrant 1 mainterminal 2 + quadrant 3 mainterminal 2 ? v tm i h v tm maximum on state voltage i h holding current mt1 (+) i gt gate (+) mt2 ref mt1 (?) i gt gate (+) mt2 ref mt1 (+) i gt gate (?) mt2 ref mt1 (?) i gt gate (?) mt2 ref ? mt2 negative (negative half cycle) mt2 positive (positive half cycle) + quadrant iii quadrant iv quadrant ii quadrant i quadrant definitions for a triac i gt ? + i gt all polarities are referenced to mt1. with in?phase signals (using standard ac lines) quadrants i and iii are used. www.kersemi.com
MAC12D, mac12m, mac12n 4 t j , junction temperature ( c) figure 1. typical gate trigger current versus junction temperature t j , junction temperature ( c) i gt , gate trigger current (ma) v gt , gate trigger voltage (volt) -40 -10 20 50 80 110 125 100 1 q3 q1 q2 1.10 0.40 q1 q2 q3 figure 2. typical gate trigger voltage versus junction temperature holding current (ma) t j , junction temperature ( c) mt2 positive mt2 negative latching current (ma) t j , junction temperature ( c) figure 3. typical holding current versus junction temperature figure 4. typical latching current versus junction temperature -25 5 35 65 95 10 100 1 10 100 1 10 -40 -10 20 50 80 110 125 -25 5 35 65 95 -40 -10 20 50 80 110 125 -25 5 35 65 95 0.50 0.60 0.70 0.80 0.90 1.00 -40 -10 20 50 80 110 125 -25 5 35 65 95 q2 q1 q3 figure 5. typical rms current derating i t(rms) , rms on-state current (amp) 125 110 95 80 12 10 8 6 4 2 0 t c , case temperature ( c) figure 6. on-state power dissipation i t(av) , average on-state current (amp) 12 10 8 6 4 2 0 18 16 14 12 10 8 6 4 2 p (av) , average power dissipation (watts) 0 120 , 90 , 60 , 30 180 65 20 dc dc 60 90 120 180 30 www.kersemi.com
MAC12D, mac12m, mac12n 5 figure 7. typical on-state characteristics v t , instantaneous on-state voltage (volts) 100 0 i t , instantaneous on-state current (amp) 0.5 1 1.5 2 2.5 3 3.5 5 10 1 0.1 maximum @ t j = 125 c typical @ t j = 25 c maximum @ t j = 25 c figure 8. typical thermal response t, time (ms) r(t), transient thermal resistance (normalized) 1 0.1 0.01 10000 1000 100 10 1 0.1 4 4.5 www.kersemi.com
MAC12D, mac12m, mac12n 6 package dimensions style 4: pin 1. main terminal 1 2. main terminal 2 3. gate 4. main terminal 2 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 q h z l v g n a k 123 4 d seating plane ?t? c s t u r j to?220ab case 221a?09 issue z www.kersemi.com
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